Stefan Linder was born in Geneva, Switzerland in 1965. He completed his undergraduate studies in electrical engineering at the Swiss Federal Institute of Technology (ETH) in 1990. After a period of employment in the United States, he returned in 1991 to Switzerland to embark on a postgraduate research program at ETH Zurich. Immediately after obtaining his PhD in 1996, he joined ABB (Asa Brown Boveri) as an R&D engineer in the Power Semiconductors business unit. In ABB, he was mainly responsible for the design and development of Intergrated Gate Commutated Thyristors (IGCT) and Insulated Gate Bipolar Transistors (IGBT). Since January 2000, Dr. Linder is Vice President of ABB Research and Development.